\relax 
\citation{Jing:ISCAEM}
\citation{Jing:IEEE99}
\citation{Jing:microEM,jing:vlsid05,Jing:xuanEM,Jing:DACEM,Jing:IEEE99}
\citation{Jing:microEM}
\citation{jing:vlsid05}
\citation{Jing:xuanEM}
\citation{Jing:DACEM}
\citation{Jing:IEEE99}
\citation{Jing:jwm}
\@writefile{toc}{\contentsline {section}{\numberline {I}Introduction}{1}}
\@writefile{toc}{\contentsline {section}{\numberline {II}Background}{1}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {II-A}}Physics of Electromigration}{1}}
\citation{Jing:BlackEM}
\citation{4633651}
\citation{4859008}
\citation{4859008}
\citation{4859008}
\citation{283282}
\citation{Jing:taiwanEM}
\citation{5232735}
\citation{Arnaud1999773}
\citation{Tao1998295}
\citation{4558988}
\citation{Jing:add}
\citation{260787}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {II-B}}Facts of Electromigration}{2}}
\@writefile{toc}{\contentsline {subsubsection}{\numberline {\unhbox \voidb@x \hbox {II-B}1}Scaling Effect}{2}}
\@writefile{toc}{\contentsline {subsubsection}{\numberline {\unhbox \voidb@x \hbox {II-B}2}Temperature}{2}}
\@writefile{toc}{\contentsline {subsubsection}{\numberline {\unhbox \voidb@x \hbox {II-B}3}Wire Width}{2}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {II-C}}EM Effects on Power Supply Network}{2}}
\@writefile{lof}{\contentsline {figure}{\numberline {1}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {The hierarchical on chip power delivery network scheme}\relax }}{2}}
\providecommand*\caption@xref[2]{\@setref\relax\@undefined{#1}}
\newlabel{fig:metal}{{1}{2}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {II-D}}Healing Effect}{2}}
\citation{Jing:PADdensity}
\citation{Jing:add}
\@writefile{lof}{\contentsline {figure}{\numberline {2}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {(A) A vertical Power/Ground strip (compensation strip) is added in the middle of the layout with two working modes (\textit  {normal mode:} power is supplied to the block from the P/G ring with the compensation strip in high-impedance state; \textit  {compensation mode:} the PAD supplies the compensation strip, with the regular P/G ring in high-impedance state); (B) chip layout divided into regular or irregular sizes with power grid.}\relax }}{3}}
\newlabel{fig:1}{{2}{3}}
\@writefile{toc}{\contentsline {section}{\numberline {III}Electromigration Enhancement Design}{3}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {III-A}}Design Mechanism}{3}}
\@writefile{lof}{\contentsline {figure}{\numberline {3}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {schematic of inverter chain under $control$ and $\overline {control}$ signal gated power supply}\relax }}{3}}
\newlabel{fig:c}{{3}{3}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {III-B}}Design Consideration}{3}}
\@writefile{toc}{\contentsline {subsubsection}{\numberline {\unhbox \voidb@x \hbox {III-B}1}Package plan influence on power grids}{3}}
\@writefile{toc}{\contentsline {subsubsection}{\numberline {\unhbox \voidb@x \hbox {III-B}2}Switching performance overhead}{3}}
\citation{Tao1998295}
\citation{Jing:sparc}
\@writefile{toc}{\contentsline {subsubsection}{\numberline {\unhbox \voidb@x \hbox {III-B}3}Sizing the power-gating transistor}{4}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {III-C}}Optimize MTTF with EDA tools}{4}}
\@writefile{lof}{\contentsline {figure}{\numberline {4}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {Approach 1 and Approach 2 simulation results.}\relax }}{4}}
\newlabel{fig:compare}{{4}{4}}
\@writefile{loa}{\contentsline {algorithm}{\numberline {1}{\ignorespaces The EM aware design flow\relax }}{4}}
\newlabel{alg1}{{1}{4}}
\@writefile{toc}{\contentsline {section}{\numberline {IV}Results}{4}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {IV-A}}Technical Detail}{4}}
\citation{Jing:ISCAEM}
\@writefile{lof}{\contentsline {figure}{\numberline {5}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {IR drop and EM damage in an EM compensation design. Red parts are the most severe parts. (A) IR drop in the normal mode. Power is supplied from the four corners of the chip; (B) IR drop in the compensation mode. Power is supplied from the middle of the chip; (C) EM damage map in the normal mode; (D) EM damage map in the compensation mode.}\relax }}{5}}
\newlabel{fig:layout1}{{5}{5}}
\@writefile{toc}{\contentsline {subsection}{\numberline {\unhbox \voidb@x \hbox {IV-B}}Experiment and Data Analysis}{5}}
\@writefile{lof}{\contentsline {figure}{\numberline {6}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {EM healing results. (left) The coarse bidirectional mode result; (right) the balance bidirectional mode result.}\relax }}{5}}
\newlabel{fig:layout2}{{6}{5}}
\@writefile{lof}{\contentsline {figure}{\numberline {7}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {The MUL layout at two technology nodes. (left) The 130nm process with only power ring; (right) the 45nm process with a normal power strip in purple and two compensation power strips in red.}\relax }}{5}}
\newlabel{fig:mul2}{{7}{5}}
\bibstyle{ieeetr}
\bibdata{DATE12}
\bibcite{Jing:ISCAEM}{1}
\bibcite{Jing:IEEE99}{2}
\bibcite{260787}{3}
\bibcite{5232735}{4}
\bibcite{36348}{5}
\bibcite{Jing:add}{6}
\bibcite{Jing:microEM}{7}
\bibcite{jing:vlsid05}{8}
\bibcite{Jing:xuanEM}{9}
\bibcite{Jing:DACEM}{10}
\bibcite{Jing:jwm}{11}
\bibcite{Jing:BlackEM}{12}
\bibcite{4633651}{13}
\bibcite{4859008}{14}
\bibcite{283282}{15}
\bibcite{Jing:taiwanEM}{16}
\bibcite{Arnaud1999773}{17}
\bibcite{Tao1998295}{18}
\bibcite{4558988}{19}
\bibcite{Jing:PADdensity}{20}
\bibcite{Jing:sparc}{21}
\@writefile{lof}{\contentsline {figure}{\numberline {8}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {EM enhancement result for different design/technology node/temperature. The MTTF is based on hours.}\relax }}{6}}
\newlabel{fig:result}{{8}{6}}
\@writefile{lot}{\contentsline {table}{\numberline {I}{\ignorespaces Area (${um}\times {um}$) and the Overhead\relax }}{6}}
\newlabel{tab:area}{{I}{6}}
\@writefile{toc}{\contentsline {section}{\numberline {V}Conclusion}{6}}
\@writefile{lof}{\contentsline {figure}{\numberline {9}{\ignorespaces \relax \fontsize  {9}{10pt}\selectfont  {EM MTTF improvement ratio for the coarse mode and the balance mode.}\relax }}{6}}
\newlabel{fig:result2}{{9}{6}}
\@writefile{toc}{\contentsline {section}{References}{6}}
